Параметры Полевой транзистор серии C67076-A2109-A70
C67076-A2109-A70
Тип монтажа :
Производитель : SIEMENS[Siemens Semiconductor Group]
Корпус :
Описание : IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Рабочая температура : Min °C | Max °C