Параметры Полевой транзистор серии C67076-A2009-A70
C67076-A2009-A70
Тип монтажа :
Производитель : Siemens Semiconductor Group
Корпус :
Описание : IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)
IGBT Power Module (Single switch with chopper diode Including fast free-wheeling diodes Package with insulated metal base plate)
Рабочая температура : Min °C | Max °C