Параметры Полевой транзистор серии BSM25GB120DN2
BSM25GB120DN2
Тип монтажа :
Производитель : Siemens Semiconductor Group
Корпус :
Описание : IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Рабочая температура : Min °C | Max °C